Significantly higher conversion efficiency of 25.5% at mass production scale, resulting in lower LCOE.
No light-induced degradation due to no boron-oxygen bond in N-type silicon substrate.
Low temperature coefficient of -0.29%, compared to -0.45% of PERC cell, resulting in more power generation, especially in warm places.
ifaciality above 85% ensures at least 1.1% more total power generation than PERC cells.
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